منابع مشابه
A surface-tailored, purely electronic, mott metal-to-insulator transition.
Mott transitions, which are metal-insulator transitions (MITs) driven by electron-electron interactions, are usually accompanied in bulk by structural phase transitions. In the layered perovskite Ca(1.9)Sr(0.1)RuO4, such a first-order Mott MIT occurs in the bulk at a temperature of 154 kelvin on cooling. In contrast, at the surface, an unusual inherent Mott MIT is observed at 130 kelvin, also o...
متن کاملMott physics near the insulator-to-metal transition in NdNiO3.
An optical study of NdNiO(3) ultrathin films with insulating and metallic ground states reveals new aspects of the insulator-to-metal transition that point to Mott physics as the driving force. In contrast with the behavior of charge-ordered systems, we find that the emergence of the Drude resonance across the transition is linked to a spectral weight transfer over an energy range of the order ...
متن کاملMott-Hubbard metal-insulator transition at noninteger filling
Krzysztof Byczuk, Walter Hofstetter, and Dieter Vollhardt Institute of Theoretical Physics, Warsaw University, Ulica Hoża 69, PL-00-681 Warszawa, Poland Theoretical Physics III, Center for Electronic Correlations and Magnetism, Institute for Physics, University of Augsburg, D-86135 Augsburg, Germany Lyman Physical Laboratory, Harvard University, Cambridge, Massachusetts 02138, USA ~Received 2 S...
متن کاملMetal-insulator transition in VO2: a Peierls-Mott-Hubbard mechanism
The electronic structure of VO2 is studied in the frameworks of local density approximation (LDA) and LDA+U to give a quantitative description of the metal-insulator (MI) transition in this system. It is found that, both structural distortion and the local Coulomb interaction, play important roles in the transition. An optical gap, comparable to the experimental value has been obtained in the m...
متن کاملCritical behaviour near the metal - insulator transition of a doped Mott insulator
We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical potential in the change from hole to electron doping, for U larger than a critical value Uc, has been calculated analytically and is found to be in good agreement ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2020
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.101.235149